Power electronics designers face a crucial choice: Silicon IGBTs or Silicon Carbide (SiC) MOSFETs? Both drive high-power applications however differ considerably.
(igbt sic)
Changing Losses: SiC MOSFETs are the clear victor here. They switch over much faster than IGBTs, drastically lowering switching losses. This straight equates to higher system performance and enables greater changing frequencies. Higher regularities indicate smaller sized, lighter passive elements like inductors and capacitors.
Thermal Efficiency: SiC’s superior thermal conductivity allows devices to run cooler at the exact same power level or deal with more power at the very same temperature. This makes it possible for extra portable designs and potentially higher power thickness systems.
Voltage & Current: IGBTs commonly held the benefit at extremely high voltages (> 1700V) and extremely high currents. Nonetheless, SiC innovation is rapidly closing this void, providing durable solutions in the 1200V-1700V array appropriate for numerous demanding applications like EV grip inverters and solar inverters.
Cost: Expense remains a significant element. SiC gadgets are substantially more costly than silicon IGBTs. While SiC costs are dropping, the initial price costs is significant. IGBTs provide a proven, economical service, particularly for cost-sensitive or high-current applications where their changing losses are much less critical.
(igbt sic)
Applications: Select SiC for high-frequency designs (> 50kHz), applications requiring maximum effectiveness (EV chargers, solar inverters), or where size/weight reduction is essential. IGBTs continue to be strong challengers for industrial electric motor drives, high-current applications like welding, and circumstances where cost is the main vehicle driver. The decision ultimately rests on balancing efficiency requirements (efficiency, size, frequency) versus budget constraints.
Inquiry us
if you want to want to know more, please feel free to contact us.